石川　博康
電子工学科 (工学部)
教授
半導体エレクトロニクス研究室
■専門分野
半導体工学、半導体薄膜結晶成長
■研究の内容
■研究室分野キーワード
■関連業種
GaN系化合物半導体のMOCVD（有機金属気相成長法）結晶成長技術、デバイス作製および評価をもとに、GaN系材料の新規な成長方法（基板・原料）、新規半導体の探索を行っていきます。
電気・電子
電子部品・デバイス・電子回路製造業
■教員研究テーマ
①省エネルギー低損失電子デバイスの研究②高効率紫外発光・受光素子の研究③GaN系半導体の結晶成長に関する研究
■相談可能な分野
■保有機器
■研究室のスタンス
GaN系半導体のMOCVD結晶成長技術
GaN系半導体を用いた発光・受光デバイス
GaN系半導体を用いた電子デバイス
RFスパッタ装置
AFM
■主な著書
  • MOCVD法によるSi(110)基板上へのGaNの成長（2009/10 エヌ・ティー・エス刊行「次世代パワー半導体」 p.111～119）
■主な論文
  • Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates（2011/01 J. Crystal Growth）
  • Improved MOCVD growth of GaN on Si-on-porous-silicon substrates（2010/03 Phys. Stat. Sol. (c)）
  • MOCVD growth of GaN on porous silicon substrates（2008/11 J. Crystal Growth）
  • GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si（2008/03 Phys. Stat. Sol. (c)）
  • Recessed-Gate AlGaN/GaN HFETs With Lattice-Matched InAlGaN Quaternary Alloy Capping Layers（2005/10 IEEE. Trans. Electron. Dev.）
  • DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates（2005/09 Jpn. J. Appl. Phys.）
  • Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties（2005/08 J. Vac. Sci. Technol. B,）
  • High Performance of InGaN LEDs on (111) Silicon Substrates Grown by MOCVD（2005/03 IEEE. Electron. Dev. Lett.）
  • Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy（2004/12 Jpn. J. Appl. Phys.）
  • MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates（2004/12 J. Crystal Growth）
  • Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si（2004/12 J. Crystal Growth）
  • High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy（2004/09 Appl. Phys. Lett.）
  • Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si（2004/09 Phys. Stat. Sol. (a)）
  • Influence of Growth Temperature on Quaternary AlInGaN Epilayers for Ultraviolet Emission Grown by Metalorganic Chemical Vapor Deposition（2004/05 Jpn. J. Appl. Phys.）
  • Formation chemistry of high-density nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates（2004/05 Appl. Phys. Lett.）
  • High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission（2004/03 J. Cryst. Growth）
  • Comparative Study on the Properties of GaNAs/GaAs Triple Quantum Wells Annealed by Different Methods（2004/03 Jpn. J. Appl. Phys）
  • Growth and characterization of high-quality quaternry AlInGaN epilayers on sapphire（2003/12 J. Crystal Growth）
  • Reduction of the bowing in MOVPE AlGaN/GaN HEMT structures by using an interlayer insertion method（2003/12 Phys. Stat. Sol. (c)）
  • Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE（2003/12 Phys. Stat. Sol. (c)）
  • InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template by metalorganic chemical vapor deposition（2003/12 Phys. Stat. Sol. (c)）
  • Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer（2003/12 Phys. Stat. Sol. (c)）
  • High-quality quaternary AlInGaN epilayers on sapphire（2003/11 Phys. Stat. Sol. (a)）
  • Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE（2003/10 IEICE TRANSACTIONS on Electronic）
  • High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates（2003/10 IEICE Trans. Electron.）
  • Valence Band Discontinuity at the AlN/Si Interface（2003/10 Jpn. J. Appl. Phys.）
  • Electrical Characteristics of AlGaN/GaN HEMTs on 4-in Diameter Sapphire Substrate（2003/08 IEEE. Electron Dev. Lett.,）
  • Highly resistive GaN layers formed by ion implantation of Zn along the c axis（2003/08 J. Appl. Phys）
  • Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells（2003/06 Appl. Phys. Lett.）
  • Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition（2003/05 Jpn. J. Appl. Phys.）
  • Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors（2003/05 Appl. Phys. Lett.）
  • Characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire（2003/04 J. Vac. Sci Technol. B）
  • High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer（2003/03 Jpn. J. Appl. Phys.）
  • Suppression of Crack Generation in GaN/AlGaN Distributed Bragg Reflector on Sapphire by the Insertion of GaN/AlGaN Superlattice Grown by Metal-Organic Chemical Vapor Deposition（2003/02 Jpn. J. Appl. Phys.）
  • High-Quality GaN Growth on AlN/Sapphire Templates by MOVPE（2002/01 Inst. Phys. Conf. Ser.）
  • Orange GaInN/GaN Multi-Quantum-Well Light-Emitting Diodes using a Post-Annealing Technique（2002/01 Inst. Phys. Conf. Ser.）
  • Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC（2002/10 Appl. Phys. Lett.,）
  • Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE（2002/09 J. Cryst. Growth）
  • Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates（2002/08 Appl. Phys. Lett.）
  • Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition（2002/07 Appl. Phys. Lett.）
  • Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition（2002/06 J. Appl. Phys.）
  • AlGaN/GaNヘテロ構造の諸特性と 高電子移動度トランジスター（2002/06 電気学会論文誌C）
  • MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors（2002/04 J. Crystal Growth）
  • Characteristics of BCl3 Plasma-Etched GaN Schottky Diodes（2002/04 Jpn. J. Appl. Phys.）
  • High-Temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates（2002/03 Appl. Phys. Lett.）
  • InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition（2002/01 J. Appl. Phys.）
  • GaN Metal-Semiconductor-Metal UV Photodetector with Recessed Electrodes（2002/01 Jpn. J. Appl. Phys.）
  • GaN-based optoelectronic devices on sapphire and Si substrates（2001/12 Materials Science in Semiconductor Processing）
  • InGaN Multiple-Quantum-Well Light Emitting Diodes on Si(111) Substrates（2001/11 physica status solidi (a)）
  • Suppression of GaInN/GaN Multi- Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure（2001/11 Jpn. J. Appl. Phys.）
  • Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates（2001/10 Appl. Phys. Lett.）
  • High-Transconductance AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating Silicon Carbide Substrate（2001/10 Jpn. J. Appl. Phys.）
  • Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector with High Internal Gain（2001/05 Jpn. J. Appl. Phys.）
  • Characterizations of Recessed Gate AlGaN/GaN HEMTs on Sapphire（2001/03 IEEE Trans. Electron Devices）
  • Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes（2001/03 IEEE Trans. Electron Devices）
  • Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement（2001/01 J. Appl. Phys.）
  • GaN MESFETs on (111) Si substrate grown by MOCVD（2000/10 Electron. Lett.）
  • Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N（2000/04 Jpn. J. Appl. Phys.）
  • Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire（2000/04 Appl. Phys. Lett.）
  • Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors（2000/04 IEICE Trans. Electron.）
  • リセスゲートを用いたサファイア基板上 のAlGaN/GaN HEMTの諸特性（2000/04 電子情報通信学会論文誌Ｃ）
  • High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition（2000/03 Jpn. J. Appl. Phys.）
  • Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire（2000/01 Appl. Phys. Lett.）
  • High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer（1999/11 Phys. Stat. Sol. (a)）
  • Optical Absorption and Photoluminescence Studies of n-type GaN（1999/09 Jpn. J. Appl. Phys.）
  • Heteroepitaxial growth of III-V compound semiconductors for optoelectronic devices（1999/05 Bull. Mater. Sci.）
  • GaN on Si Substrate with AlGaN/AlN Intermediate Layer（1999/05 Jpn. J. Appl. Phys.）
  • Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition（1999/04 Jpn. J. Appl. Phys.）
  • Characteristics of GaN Schottky Diode Grown on Sapphire Substrate by MOCVD（1998/01 Mater. Res. Soc. Symp. Proc.）
  • The infrared optical functions of AlxGa1-xN determined by reflectance spectroscopy（1998/09 Appl. Phys. Lett.）
  • Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density（1998/08 Appl. Phys. Lett.）
  • Thermo-optical nonlinearity of GaN grown by metalorganic chemical-vapor deposition（1998/07 Appl. Phys. Lett.）
  • EBIC observation of n-GaN grown on sapphire substrates by MOCVD（1998/06 J. Crystal Growth）
  • Thermal stability of GaN on (111)Si substrate（1998/06 J. Crystal Growth）
  • Optical properties of AlxGa1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry（1998/05 Appl. Phys. Lett.）
  • Sidegating effect of GaN MESFETs grown on sapphire substrate（1998/03 Electronics Letters）
  • Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient（1998/01 Jpn. J. Appl. Phys.）
  • Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode（1997/12 Jpn. J. Appl. Phys.）
  • Polarized Reflectance Spectroscopy and Spectroscopic Ellipsometry Determination of the Optical Anisotropy of Gallium Nitride on Sapphire（1997/08 Jpn. J. Appl. Phys.）
  • Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77eV) by spectroscopic ellipsometry and the optical transmission method（1997/06 Appl. Phys. Lett.）