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Laboratory Overview	Graphene applications to semiconductor devices Nanocarbon such as graphene has been expected for a conductor material for semiconductor metallization because of its lower resistance and higher reliability than conventional metals, and it will lead to a low-carbon society by the lower power consumption and less waste of electronic systems. We have been developing the fabrication processes for semiconductor devices such as LSIs and GaN power devices.
Laboratory Character	Grobal students in the docotor and master courses have been worikng on advanced research projects including premier national project in Japan such as CREST and publishing their works in international journals and conferences. We have been collaborating with industries and top universities such as UCSB.
Research Outputs	You can review research papers in the website below. https://shibaura.pure.elsevier.com/en/persons/kazuyoshi-ueno
Laboratory Research Field	graphene copper metallization process technology interconnection LSI power devices contact reliability
Recent Research Topics	Graphene application to semiconductor devices Graphene barrier for copper interconnects in long-lifetime memory LSIs over 100 year (JST CREST) Synthesis of high quality grapnene film at low-temperature for semiconductor device application High reliability GaN diodes using graphene metallization Synaptic interconnection for neuromorphic computing (AI)
Affiliated Conferences	The Japan Society of Applied Physics IEEE The Institute of Electrical Engineers of Japan
For Social Contributions to the World Sustainability	We would like to contribute to realize low-carbon society through the development of high efficient and high reliability devices using nanocarbon such as graphene.
Related Industries	Semiconductor device manufacturing Semicoductor manufacturing equipments Automobile manufacturing Electronic components Electronic materials
Applicable Industrial Fields	LSI interconnection process Semiconductor metallization process Interconnect reliability
Instruments and Devices in this Laboratory	Sputtering CVD (graphene CNT current-enhanced CVD) Annealing (vacuum Ar N2) XPS/UPS Graphite intercalation Bias temperature stress (BTS
Research Seeds	Multilayer graphene deposition Doped graphene with low-resistance Our original process using current stress (current-enhanced CVD)